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| inchange semiconductor product specification silicon npn power transistors 2n5301 2N5302 2n5303 description ? with to-3 package ? complement to type 2n4398/4399/5745 ? low collector/saturation voltage ? excellent safe operating area applications ? for use in power amplifier and switching circuits applications. pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2n5301 40 2N5302 60 v cbo collector-base voltage 2n5303 open emitter 80 v 2n5301 40 2N5302 60 v ceo collector-emitter voltage 2n5303 open base 80 v v ebo emitter-base voltage open collector 5 v 2n5301/5302 30 i c collector current 2n5303 20 a i b base current 7.5 a p d total power dissipation t c =25 ?? 200 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2n5301 2N5302 2n5303 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n5301 40 2N5302 60 v ceo(sus) collector-emitter sustaining voltage 2n5303 i c =0.2a ;i b =0 80 v 2n5301/5302 0.75 v cesat-1 collector-emitter saturation voltage 2n5303 i c =10a; i b =1a 1.0 v 2n5301/5302 i c =20a ;i b =2a 2.0 v cesat-2 collector-emitter saturation voltage 2n5303 i c =15a ;i b =1.5a 1.5 v 2n5301/5302 i c =30a ;i b =6a 3.0 v cesat-3 collector-emitter saturation voltage 2n5303 i c =20a ;i b =4a 2.0 v v besat-1 base-emitter saturation voltage i c =10a; i b =1a 1.7 v 2n5301/5302 1.8 v besat-2 base-emitter saturation voltage 2n5303 i c =15a ;i b =1.5a 2.0 v 2n5301/5302 i c =20a ;i b =2a v besat-3 base-emitter saturation voltage 2n5303 i c =20a ;i b =4a 2.5 v 2n5301/5302 i c =15a ; v ce =2v 1.7 v be-1 base-emitter on voltage 2n5303 i c =10a ; v ce =2v 1.5 v 2n5301/5302 i c =30a ; v ce =4v 3.0 v be-2 base-emitter on voltage 2n5303 i c =20a ; v ce =4v 2.5 v i cex collector cut-off current v ce = rated v ceo ; v be(off) =1.5v t c =150 ?? 1.0 10 ma i ceo collector cut-off current v ce =rated v ceo ; i b =0 5.0 ma i cbo collector cut-off current v cb =rated v cbo ; i e =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 5.0 ma h fe-1 dc current gain i c =1a ; v ce =2v 40 2n5303 i c =10a ; v ce =2v h fe-2 dc current gain 2n5301/5302 i c =15a ; v ce =2v 15 60 2n5303 i c =20a ; v ce =4v h fe-3 dc current gain 2n5301/5302 i c =30a ; v ce =4v 5 f t transition frequency i c =1a ; v ce =10v;f=1.0mhz 2 mhz inchange semiconductor product specification 3 silicon npn power transistors 2n5301 2N5302 2n5303 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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